Sub-bandgap polysilicon photodetector in zero-change CMOS process for telecommunication wavelength.

Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum...

High-speed polysilicon CMOS photodetector for telecom and datacom

Fully Silicided Metal Gates for High-Performance CMOS Technology: A Review

Full silicidation ~FUSI! of polysilicon gates promises to be a simple approach for formation of metal gate electrodes for highly scaled complementary metal oxide semiconductor ~CMOS! transistors. Devices have been reported with several different silicides, prominently with nickel. NiSi was shown to produce different work functions, covering a large portion of silicon bandgap, in relation to a d...

Sub-1-V-Output CMOS bandgap reference circuit with small area and low power consumption

In this paper, a new low-VDD CMOS bandgap reference circuit with small layout area and low power consumption is proposed. The proposed circuit delivering its output voltage below 1V has its Proportional-To-Absolute-Temperature (PTAT) term compensated by the Complementary-proportional-To-AbsoluteTemperature (CTAT) voltage thereby suppressing a change in its output voltage regardless of temperatu...

On-Chip ESD Protection Design for GHz RF Integrated Circuits by Using Polysilicon Diodes in sub-quarter-micron CMOS Process

ESD protection in RF integrated circuits has several considerations: low parasitic capacitance, constant input capacitance, and insensitive to substrate coupling noise. In this paper, a new ESD protection design with polysilicon diodes for RF IC applications is proposed and characterized. The proposed polysilicon diode is constructed by polysilicon layer in a general CMOS process with a central...